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[Analysis Case] HF Etching Simulation of a-SiO2 Film

Effective for understanding surface reactions at the atomic level in the etching process.

With the miniaturization of semiconductor processes, the importance of surface reactions due to etching gases, precursors in ALD film formation, and plasma treatments is increasing. For systems involving complex chemical reactions such as etching, changes in surface bonding states, and defect generation, analysis using molecular dynamics calculations is effective for understanding phenomena at the atomic level. This document evaluates the HF etching reaction of a-SiO2 using molecular dynamics calculations. A similar approach can be applied to various reactions and materials.